1/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.02 - rev.a 4v drive pch mosfet RRH050P03 ? structure ? dimensions (unit : mm) silicon p-channel mosfet ? features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (sop8). ? application switching ? packaging specifications ? inner circuit package code taping basic ordering unit (pieces) RRH050P03 tb 2500 type ? absolute maximum ratings (ta = 25 ? c) ? 30 20 5 20 ? 1.6 ? 20 2.0 150 ? 55 to + 150 v dss v gss p d tch v v a w c i d i dp a i s i sp a a tstg c symbol limits unit parameter drain-source voltage range of storage temperature channel temperature power dissipation source current (body diode) drain current gate-source voltage pulsed continuous pulsed continuous ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board. ? 1 ? 1 ? 2 ? thermal resistance rth (ch-a) 62.5 c / w symbol limits unit parameter channel to ambient ? mounted on a ceramic board. ? each lead has same dimensions sop8 (1) source (2) source (3) source (4) gate (5) drain (6 )drain (7) drain (8) drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (8) (7) (6) (5) (1) (2) (3) (4)
2/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.02 - rev.a data sheet RRH050P03 ? electrical characteristics (ta = 25 ? c) a pf m s v a v pf pf ns ns ns ns nc nc nc v gs = 0v f = 1mhz v ds =? 10v v gs =? 10v i d =? 2.5a, v dd ? 15v r l = 6.0 r g = 10 i d =? 5a, v gs =? 10v i d =? 2.5a, v gs =? 4.5v i d =? 2.5a, v gs =? 4.0v i d =? 5a, v ds =? 10v i d =? 1ma, v gs = 0v v gs = 20v, v ds = 0v v ds =? 30v, v gs = 0v v ds =? 10v, i d =? 1ma parameter test conditions unit min. typ. i gss i dss l y fs l c iss symbol c oss c rss t r t f q gd q gs q g v (br)dss v gs (th) r ds (on) ? ? ? ? ? ? ? ? ? t d (on) t d (off) ? pulsed static drain-source on-state resistance gate-drain charge gate-source charge total gate charge fall time turn-off delay time rise time turn-on delay time reverse transfer capacitance output capacitance input capacitance forward transfer admittance gate threshold voltage zero gate voltage drain current drain-source breakdown voltage gate-source leakage ?? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 30 36 52 58 850 120 120 9 25 55 30 9.2 2.4 3.6 ? 1.0 4 max. ? ? ? ? ? ? ? ? ? ? ? 50 72 80 10 ? 1 ? 2.5 ? r l = 3.0 r g = 10 i d = ? 5a, v dd ? 15v v gs =? 5v ? body diode characteristics (source-drain) (ta = 25 ? c) parameter test conditions v unit ?? min. typ. ? 1.2 max. i s =? 5a, v gs = 0v v sd symbol ? pulsed forward voltage ?
3/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.02 - rev.a data sheet RRH050P03 ? electrical characteristic curves 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 drain-source voltage -v ds [v] drain current : -i d [a] ta=25 c pulsed v gs =-10v v gs =-2.5v v gs =-3.0v v gs =-3.5v 0.001 0.01 0.1 1 10 1.0 1.5 2.0 2.5 3.0 gate-source voltage : -v gs [v] drain current : -i d [a] v ds =-10v pulsed ta=125 c ta=75 c ta=25 c ta= -25 c 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-state resistance : r ds (on) [m ] ta=25 c pulsed v gs =-4.0v v gs =-4.5v v gs =-10v 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 source-drain voltage : -v sd [v] reverse drain current : -is [a] v gs =0v pulsed ta=125 c ta=75 c ta=25 c ta=-25 c 0 2 4 6 8 10 0246810 drain-source voltage -v ds [v] drain current : -i d [a] v gs =-2.5v v gs =-3.0v ta=25 c pulsed v gs =- 10v v gs =- 4.5v v gs =- 3.5v 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-state resistance : r ds (on) [m ] v gs = -4.5v pulsed ta=125 c ta=75 c ta=25 c ta= -25 c 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-state resistance : r ds (on) [m ] v gs = -10v pulsed ta=125 c ta=75 c ta=25 c ta= -25 c 0 1 10 100 0.1 1.0 10.0 drain current : -i d [a] v ds =-10v pulsed ta= -25 c ta= 125 c ta= 25 c ta= 75 c 1 10 100 1000 0.1 1 10 drain current : -i d [a] static drain-source on-state resistance : r ds (on) [m ] v gs = -4.0v pulsed ta=125 c ta= -25 c ta= 75 c ta= 25 c fig.1 typical output characteristics( ) fig.2 typical output characteristics( ? ) fig.3 typical transfer characteristics fig.4 static drain-source on-state resistance vs. drain current( ) fig.5 static drain-source on-state resistance vs. drain current( ? ) fig.6 static drain-source on-state resistance vs. drain current( ?? ) fig.7 static drain-source on-state resistance vs. drain current( v ) fig.9 reverse drain current vs. sourse-drain voltage fig.8 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] v gs =-4.0v v gs =-4.5v
4/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.02 - rev.a data sheet RRH050P03 0 20 40 60 80 100 120 140 160 180 200 2 4 6 8 10 12 14 gate-surce voltage : -v gs [v] static drain-source on-state resistance r ds (on) [m ] ta=25 c pulsed i d = -2.50a i d = -5.00a 0 2 4 6 8 10 0 5 10 15 20 total gate charge : qg [nc] gate-source voltage : -v gs [v] ta=25 c v dd =-15v i d =-5.0a r g =10 pulsed 10 100 1000 10000 0.01 0.1 1 10 100 drain-source voltage : -v ds [v] capacitance : c [pf] ciss coss crss ta=25 c f=1mhz v gs =0v 0.01 0.1 1 10 100 0.1 1 10 100 drain ? source voltage : -v ds ( v ) drain current : -i d (a) p w = 1ms p w = 10ms ta = 25 c single pulse mounted on ceramic board operation in this area is limited by r ds( on) -10v ) dc operation p w = 100us 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 pulse width : pw(s) normarized transient thermal resistance : r (t) ta = 25 c single pulse : 1unit rth (ch-a)(t) = r( t ) rth ch-a rth(ch-a) = 62.5 c /w 1 10 100 1000 10000 0.0 0.1 1.0 10.0 drain current : -i d [a] switching time : t [ns] tr tf td(on) td(off) ta=25 c v dd = -15v v gs =-10v r g =10 pulsed fig.10 static drain-source on-state resistance vs. gate source voltage fig.12 dynamic input characteristics fig.13 typical capacitance vs. drain-source voltage fig.11 switching characteristics fig.14 maximum safe operating aera ( v gs = ()
5/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.02 - rev.a data sheet RRH050P03 ? measurement circuit f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10 % 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) fig.2-1 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd
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